ST9435GP p channel enhancement mode mosfet 15.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST9435GP 2010. v1 description ST9435GP is the pchannel logic enhancement mode po wer field effect transistor which is produced using high cell density, dmos tre nch technology. this high density process is especially tailored to minimize onstate resistance. these device is particularly suited for low voltage application, notebook computer power management and other battery circuits where h ighside switching. pin configuration absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symb ol typical unit drainsource voltage vdss 30 v gatesource voltage vgss 20 v continuous drain current (tj=150 ) ta=25 ta=100 id 15.0 8.0 a pulsed drain current idm 60 a power dissipation ta=25 pd 62.5 w operation junction temperature tj 55/150 storgae temperature range tstg 55/150 thermal resistancejunction to ambient rja 62 /w feature 30v/10a, r ds(on) = 50m @v gs = 10v 30v/5a, r ds(on) = 80m @v gs = 4.5v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc current capability to220 package design
ST9435GP p channel enhancement mode mosfet 15.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST9435GP 2010. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain source breakdown voltage v (br)dss v gs =0v,id=250ma 30 v gate threshold voltage v gs(th) v ds =v gs ,id=250ua 1.0 3.0 v gate leakage current i gss v ds =0v,v gs =20v 100 na zero gate voltage drain current i dss v ds =24v,v gs =0v 1 ua v ds =24v,v gs =0v t j =125 250 drainsource on resistance r ds(on) v gs =10v,i d =10a v gs =4.5v,i d =5a 50 80 57 88 m forward transconductance gfs v ds =10v,i d =10a 10 s diode forward voltage v sd i s =10a,v gs =0v 1.2 v dynamic total gate charge q g v ds =24v v gs =4.5v i d 10a 9 16 nc gatesource charge q gs 1.6 gatedrain charge q gd 4.3 input capacitance c iss v ds =25v v gs =0v f=1mhz 575 750 pf output capacitance c oss 80 reverse transfercapacitance c rss 75 turnon time t d(on) tr v ds =15v,r g = 3.3 i d =10a,v gs =10v r d =1.5 6.8 ns 46 turnoff time t d(off) tf 20 7
ST9435GP p channel enhancement mode mosfet 15.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST9435GP 2010. v1 typicalcharacterictics
ST9435GP p channel enhancement mode mosfet 15.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST9435GP 2010. v1 typical characterictics
ST9435GP p channel enhancement mode mosfet 15.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST9435GP 2010. v1 typical characterictics
ST9435GP p channel enhancement mode mosfet 15.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST9435GP 2010. v1 to-220-3l package outline
|
